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OPB750N L793ID Q2012LH5 BU401 A2001 MAX14759 SEMIX SD1448
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  i nchange semiconductor isc product specification isc website is registered trademark 1 isc silicon pn p power transistor 2 sa 2121 description high current capability high power dissipation high collector - emitter breakdown voltage - : v ( br )ceo = - 20 0v( min ) complement to t yp e 2 sc 5 949 applications p ower amplifier applications recommended for audio frequency amplifier output stage. a bsolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector - b ase v oltage - 2 0 0 v v ceo collector - e mitter v oltage - 2 0 0 v v ebo emitter - b ase v oltage - 5 v i c collector c urrent - continuous - 1 5 a i b b ase c urrent - continuous - 1 .5 a p c collector p ower d issipat i on @ t c =25 22 0 w t j junction temperature 150 t stg storage temperature range - 55~ 150
i nchange semiconductor isc product specification isc website is registered trademark 2 isc silicon pnp power transistor 2 sa2121 electrical characteristics t c =25 v (br) ceo collector - e mitter breakdown v oltage i c = - 50 m a ; i b = 0 - 2 0 0 v v c e ( sat ) collector - e mitter s aturation v oltage i c = - 10 a ; i b = - 1 a - 3 .0 v v be( on ) base - e mitter on v oltage i c = - 8 a ; v ce = - 5 v - 1.5 v i c b o collector c utoff c urrent v c b = - 20 0 v ; i e = 0 - 5 a i ebo emitter c utoff c urrent v eb = - 5 v; i c = 0 - 5 a h fe - 1 dc c urrent g ain i c = - 1 a ; v ce = - 5 v 5 5 160 h fe - 2 dc c urrent g ain i c = - 8 a ; v ce = - 5 v 35 c ob out p ut capacitance i e = 0 ; v c b = - 10 v ;f= 1.0mhz 47 0 pf f t current - gain bandwidth product i c = - 1 a ; v ce = - 5 v 25 mhz ? h fe - 1 classifications r o 55 - 110 80 - 160


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